The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 29, 2005
Filed:
Oct. 20, 2003
Hung Chang Lin, Silver Spring, MD (US);
Hung Chang Lin, Silver Spring, MD (US);
Maryland Semiconductor, Inc., Clarksburg, MD (US);
Abstract
A MOSFET can operate as a resistor by operating in the linear or ohmic region of the drain V-I characteristics. This region can be obtained by floating the gate of the MOSFET, when the dc current and the voltage drop are given. Multiple resistors can be duplicated (or mirrored) by sharing the same source and floating gate. The floating gate voltage can be simulated using a closed loop equivalent circuit. Alternatively, the gate voltage can also be derived from the given drain-to-source voltage and the given current in a feedback loop. With this adaptive MOSFET resistor, the minimum supply voltage can be as low as the sum of the BJT threshold and the complementary BJT saturation voltage, e.g. V≧V+Vsat (e.g. 0.8+0.15<1.0V). The threshold voltage Vt should be less than V.