The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 29, 2005

Filed:

Aug. 01, 2003
Applicants:

Christian Evers, Kirchheim, DE;

Wolfgang Cohrs, Poing, DE;

Wolfgang Richter, Haar, DE;

Thomas Will, Pfaffenhofen, DE;

Martin Hassler, Munich, DE;

Inventors:

Christian Evers, Kirchheim, DE;

Wolfgang Cohrs, Poing, DE;

Wolfgang Richter, Haar, DE;

Thomas Will, Pfaffenhofen, DE;

Martin Hassler, Munich, DE;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K017/00 ;
U.S. Cl.
CPC ...
Abstract

Electronic switch () with two switching states (ON, OFF) possesses at least one field effect switching transistor (Q), input port (In) connected with source terminal (S), on which input signal (Vin) is present, output port (Out) connected with drain terminal, on which switched signal (Vout) is present, control port (Con) connected to gate terminal (G), on which is present signal (Vc) for controlling electronic switch () and switch apparatus (Sw), which creates the two switching states (ON, OFF) by means of a changing of control signal (Vc). Controlling signal (Vc), during at least one of the two switching states (ON, OFF) is, at least partially, formed by correction signal (Sc), which in turn is produced from input signal (Vin), so that the frequency dependent drop in voltage between the drain-source channel and the gate electrode of the field effect switching transistor (Q) is at least partially compensated.


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