The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 29, 2005
Filed:
Jan. 28, 2000
Applicant:
Eiji Morifuji, Yokohama, JP;
Inventor:
Eiji Morifuji, Yokohama, JP;
Assignee:
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L027/01 ;
U.S. Cl.
CPC ...
Abstract
The semiconductor device has a low-resistance layer provided under the interconnection extending from the singal input to a gate of MOSFET. The low-resistance layer suppresses the influence of the substrate resistance and the noise characteristic of the semiconductor device can also be improved. The low-resistance layer can be provided on a surface of the substrate or a polysilicon interconnection.
Morifuji, Eiji. (2005). Semiconductor device and method of manufacturing the same (U.S. Patent No. 6873014). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6873014
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile