The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 29, 2005
Filed:
Feb. 24, 2003
Applicants:
Akira Inoue, Kadoma, JP;
Takeshi Takagi, Kyoto, JP;
Yoshihiro Hara, Hirakata, JP;
Minoru Kubo, Nabari, JP;
Inventors:
Akira Inoue, Kadoma, JP;
Takeshi Takagi, Kyoto, JP;
Yoshihiro Hara, Hirakata, JP;
Minoru Kubo, Nabari, JP;
Assignee:
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L031/0312 ;
U.S. Cl.
CPC ...
Abstract
A silicon oxide film, a Pt film, a Ti filmand a PZT filmare deposited in this order over a Si substrate. The Si substrateis placed in a chamberso that the PZT filmis irradiated with an EHF wave. The irradiation with the EHF wave locally heats a dielectric film such as the PZT film. As a result, it is possible to improve, for example, the leakage property of the dielectric film without adversely affecting a device formed on the Si substrate