The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 29, 2005
Filed:
Jul. 03, 2002
Applicants:
Yoshikatsu Fukuda, Anan, JP;
Akira Fujioka, Anan, JP;
Inventors:
Yoshikatsu Fukuda, Anan, JP;
Akira Fujioka, Anan, JP;
Assignee:
Nichia Corporation, Tokushima, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L033/00 ;
U.S. Cl.
CPC ...
Abstract
A nitride semiconductor element exhibiting low leakage current and high ESD tolerance includes an active layer of nitride semiconductor that is interposed between a p-sided layer and an n-sided layer, which respectively consist of a plurality of nitride semiconductor layers, the p-side layer including a p-type contact layer as a layer for forming p-ohmic electrodes, the p-type contact layer being formed by laminating p-type nitride semiconductor layers and n-type nitride semiconductor layers in an alternate manner.