The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 29, 2005
Filed:
Jun. 29, 2000
Kenji Horiuchi, Tokyo, JP;
Takefumi Ishikura, Tokyo, JP;
Satoshi Yamashita, Tokyo, JP;
Aki Kawamura, Tokyo, JP;
Kazuo Nakamura, Tokyo, JP;
Kenichi Nakamura, Tokyo, JP;
Takahiro Ide, Tokyo, JP;
Kenji Horiuchi, Tokyo, JP;
Takefumi Ishikura, Tokyo, JP;
Satoshi Yamashita, Tokyo, JP;
Aki Kawamura, Tokyo, JP;
Kazuo Nakamura, Tokyo, JP;
Kenichi Nakamura, Tokyo, JP;
Takahiro Ide, Tokyo, JP;
Tokyo Gas Co., Ltd., Tokyo, JP;
Abstract
A diamond ultraviolet luminescent element () having a current-injection light-emitting diode structure includes a high-quality boron-doped p-type diamond crystal (semiconductor layer) () synthesized by the high pressure and high temperature method; a phosphorous-doped n-type diamond crystal (n-type semiconductor layer) () formed on the first diamond surface by the chemical vapor deposition; an electrode () formed on the surface of the n-type semiconductor layer (); and an electrode () formed on the surface of the p-type semiconductor layer (). The luminescence (235 nm) attributed to the recombination of free excitons resulting from current injection dominates in ultraviolet wavelength region ().