The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 29, 2005
Filed:
Sep. 17, 2003
Hongyong Zhang, Kawasaki, JP;
Makoto Igarashi, Kawasaki, JP;
Hongyong Zhang, Kawasaki, JP;
Makoto Igarashi, Kawasaki, JP;
Fujitsu Display Technologies Corporation, Kawasaki, JP;
Abstract
In the fabrication of a CMOS-TFT, non-selectively doping (for both of p- and n-type TFTs) and selectively doping (only for the n-type TFT) with p-type impurities (B: boron) are successively performed at very low concentrations to control the threshold voltages (Vthp and Vthn). More specifically, the Id-Vg characteristics of the p- and n-type TFTs are initially negatively shifted. In this state, non-selectively doping is performed positively to shift the p- and n-type TFTs first to adjust the Vthp to a specified value. Selectively doping is then performed positively to shift only the n-type TFT to adjust the Vthn to a specified value. The threshold voltages of the p- and n-type TFTs constructing the CMOS-TFT can be independently and efficiently (with minimum photolithography) controlled with high accuracy.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile