The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 29, 2005
Filed:
Feb. 26, 2004
Toshiyuki Takemori, Hanno, JP;
Yuji Watanabe, Hanno, JP;
Toshiyuki Takemori, Hanno, JP;
Yuji Watanabe, Hanno, JP;
Shindengen Electric Manufacturing Co., Ltd., Tokyo, JP;
Abstract
A technique is provided which makes it possible to reduce the area of a power MOSFET. A power MOSFETaccording to the invention is a trench type in which a source regionis exposed on both of a substrate top surfaceand an inner circumferential surfaceof a trench. Since this makes it possible to provide contact between the source regionand a source electrode filmnot only on the substrate top surfacebut also on the inner circumferential surfaceof the trench, source contact is provided with a sufficiently low resistance only on the substrate top surface, and the area of the device can be made smaller than that in the related art in which the source regionhas been formed in a larger area.