The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 29, 2005
Filed:
Nov. 18, 2003
Applicants:
Majid M. Mansoori, Plano, TX (US);
Zhigiang Wu, Plano, TX (US);
Inventors:
Majid M. Mansoori, Plano, TX (US);
Zhigiang Wu, Plano, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L021/336 ;
U.S. Cl.
CPC ...
Abstract
Methods are presented, in which an oxide protection layer is provided on a gate structure for protection against poly mushrooming during selective epitaxial silicon deposition in fabricating elevated or recessed source transistors. In one implementation, the protection layer is constructed by depositing silicon germanium over a gate polysilicon layer prior to gate patterning, and oxidizing the device to form a silicon germanium oxide over the gate polysilicon. The protection layer is then removed following selective epitaxial deposition.