The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 29, 2005
Filed:
Mar. 27, 2003
Masami Yamashita, Izumi, JP;
Masami Yamashita, Izumi, JP;
NEC LCD Technologies, Ltd., , JP;
Abstract
A method of forming a resist pattern effectively controls the manner/style and the amount of modification of a resist pattern in its reflowing process, realizing a desired resist pattern with a desired accuracy even if the deformation amount of the resist pattern is increased in the reflowing process. A second layer is formed on a first layer and then, a first resist pattern is formed on the second layer. The second layer is selectively etched using the first resist pattern as a mask. Thereafter, wettability of at least part of an exposed area of the second or first layer from the first resist pattern is adjusted, thereby forming a wettability-adjusted part. The first resist pattern is modified in such a way as to extend to the wettability-adjusted area by reflowing the first resist pattern using an organic solvent, thereby forming a second resist pattern for selectively etching the first layer or the second layer.