The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 29, 2005
Filed:
Jun. 26, 2003
Applicants:
Xiaoping Bian, San Jose, CA (US);
Mary Frances Doerner, Santa Cruz, CA (US);
Kai Tang, San Jose, CA (US);
Qi-fan Xiao, San Jose, CA (US);
Inventors:
Xiaoping Bian, San Jose, CA (US);
Mary Frances Doerner, Santa Cruz, CA (US);
Kai Tang, San Jose, CA (US);
Qi-Fan Xiao, San Jose, CA (US);
Assignee:
Hitachi Global Storage Technologies Netherlands, B.V., Amsterdam, NL;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11B005/66 ; G11B005/70 ; H01J001/00 ; B32B015/00 ;
U.S. Cl.
CPC ...
Abstract
The applicants disclose a thin film magnetic media structure with a pre-seed layer of CrTiAl. The CrTiAl pre-seed layer presents an amorphous or nanocrystalline structure. The CrTiAl pre-seed layer improves in-plane c-axis orientation while maintaining a good orientation ratio. The pulse transition width (PW50) is narrowed and the soft error rate is improved. The preferred seed layer is RuAl.