The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 22, 2005

Filed:

May. 29, 2003
Applicants:

Philippe Flatresse, Froges, FR;

Mario Casu, Turin, IT;

Inventors:

Philippe Flatresse, Froges, FR;

Mario Casu, Turin, IT;

Assignee:

STMicroelectronics SA, Montrouge, FR;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G06F017/50 ;
U.S. Cl.
CPC ...
Abstract

A method for characterizing a CMOS logic cell of the partially depleted silicon-on-insulator type (PD-SOI) may include modeling the logic cell and determining internal potentials of transistors of the cell in a dynamic equilibrium state based upon a functional simulation of the modeled cell. This may be done using a binary stimulation signal having an initial logic value. The dynamic equilibrium state may be based upon a cancellation, to within a precision error, of the sum of the squares of variations in the quantities of charge in floating substrates of the transistors taken over a period of two successive transitions of the stimulation signal.


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