The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 22, 2005
Filed:
Feb. 20, 2003
Jung-na Heo, Seoul, KR;
Whi-kun Yi, Kyungki-do, KR;
Jeong-hee Lee, Kyungki-do, KR;
Se-gi Yu, Kyungki-do, KR;
Tae-won Jeong, Seoul, KR;
Chang-soo Lee, Kyungki-do, KR;
Jung-na Heo, Seoul, KR;
Whi-kun Yi, Kyungki-do, KR;
Jeong-hee Lee, Kyungki-do, KR;
Se-gi Yu, Kyungki-do, KR;
Tae-won Jeong, Seoul, KR;
Chang-soo Lee, Kyungki-do, KR;
Samsung Electronics Co., Ltd., Suwon-si, KR;
Abstract
An electron amplifier and a method of manufacturing the same are provided. The electron amplifier includes a substrate in which a plurality of through holes are formed, a resistive layer deposited on the sidewalls of the through holes, an electron emissive layer including carbon nanotubes which is deposited on the resistive layer, and an electrode layer formed on each of the upper and lower sides of the substrate. Because the electron emissive layer of the electron amplifier is uniform and provides a high electron emission efficiency, the electron amplification efficiency is improved. The electron amplifier manufacturing method enables economical mass production of electron amplifiers.