The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 22, 2005

Filed:

Sep. 25, 2002
Applicants:

Yutaka Aoki, Ome, JP;

Ichiro Mihara, Tachikawa, JP;

Takeshi Wakabayashi, Sayama, JP;

Katsumi Watanabe, Kunitachi, JP;

Inventors:

Yutaka Aoki, Ome, JP;

Ichiro Mihara, Tachikawa, JP;

Takeshi Wakabayashi, Sayama, JP;

Katsumi Watanabe, Kunitachi, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L023/522 ; H01L023/50 ;
U.S. Cl.
CPC ...
Abstract

In a semiconductor device, re-wiring is provided on a circuit element formation region of a semiconductor substrate. A columnar electrode for connection with a circuit board is provided on the rewiring. A first insulating film is provided over the semiconductor substrate excluding a connection pad, and a ground potential layer connected to a ground potential is provided on an upper surface of the first insulating film. A re-wiring is provided over the ground potential layer with a second insulating film interposed. The ground potential layer serves as a barrier layer for preventing crosstalk between the re-wiring and circuit element formation region. A thin-film circuit element is provided on the second insulating film, and a second ground potential layer is provided as a second barrier layer over the thin-film circuit element with an insulating film interposed. Re-wiring is provided over the second ground potential layer.


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