The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 22, 2005

Filed:

Jul. 02, 2002
Applicants:

Jie Zhang, Buffalo Grove, IL (US);

Paul Brazis, South Elgin, IL (US);

Daniel Gamota, Palatine, IL (US);

Krishna Kalyanasundaram, Chicago, IL (US);

Steven Scheifers, Hoffman Estates, IL (US);

Jerzy Wielgus, Park Ridge, IL (US);

Abhijit Roy Chowdhuri, Oak Park, IL (US);

Inventors:

Jie Zhang, Buffalo Grove, IL (US);

Paul Brazis, South Elgin, IL (US);

Daniel Gamota, Palatine, IL (US);

Krishna Kalyanasundaram, Chicago, IL (US);

Steven Scheifers, Hoffman Estates, IL (US);

Jerzy Wielgus, Park Ridge, IL (US);

Abhijit Roy Chowdhuri, Oak Park, IL (US);

Assignee:

Motorola, Inc., Schaumburg, IL (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L035/24 ;
U.S. Cl.
CPC ...
Abstract

An organic field effect transistor utilizes a bifunctional contact-enhancing agent at various interfaces to improve carrier mobility through the organic semiconductor layer, to improve carrier injection, and to enhance adhesion via a bifunctional mechanism. The contact-enhancing agent can be situated between the gate electrode () and the dielectric layer () to form a chemical or physical bond between the gate electrode and the dielectric layer. It can also be situated between the dielectric layer and the organic semiconducting layer (), or between the source and drain electrodes () and the organic semiconducting layer.


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