The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 22, 2005
Filed:
Oct. 29, 2003
Eizo Kawato, Kyoto-fu, JP;
Eizo Kawato, Kyoto-fu, JP;
Shimadzu Corporation, Kyoto, JP;
Abstract
The resonance frequency of the resonant circuit, which is used to apply the RF high voltage to an electrode of the ion trap device, is deliberately shifted from the frequency of the RF driver (driving frequency). This reduces the influence of the deviation in the resonance frequency caused by the change in the RF high voltage on the shift in the phase difference between the output of the RF driver and the RF high voltage. This minimizes the degradation of various performances of the ion trap device relating to the phase difference, such as the shift in the peaks of the mass spectrum, and enhances the precision and sensitivity of the mass analysis of the mass spectrometers using the ion trap device.