The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 22, 2005
Filed:
Jun. 10, 2003
Gerard T. Caneba, Houghton, MI (US);
Vijaya Raghavan Tirumala, Glendale Heights, IL (US);
Derrick C. Mancini, Riverside, IL (US);
Hsien-hau Wang, Downers Grove, IL (US);
Gerard T. Caneba, Houghton, MI (US);
Vijaya Raghavan Tirumala, Glendale Heights, IL (US);
Derrick C. Mancini, Riverside, IL (US);
Hsien-Hau Wang, Downers Grove, IL (US);
The University of Chicago, Chicago, IL (US);
Abstract
An in situ polymer microstructure formation method. The monomer mixture is polymerized in a solvent/precipitant through exposure to ionizing radiation in the absence any chemical mediators. If an exposure mask is employed to block out certain regions of the radiation cross section, then a patterned microstructure is formed. The polymerization mechanism is based on the so-called free-radical retrograde-precipitation polymerization process, in which polymerization occurs while the system is phase separating above the lower critical solution temperature. This method was extended to produce a crosslinked line grid-pattern of poly (N-isopropylacrylamide), which has been known to have thermoreversible properties.