The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 22, 2005
Filed:
Jun. 30, 2003
Robert Wayne Bradshaw, Ocoee, FL (US);
Daniele Gilkes, Pompano Beach, FL (US);
Sailesh Mansinh Merchant, Orlando, FL (US);
Deepak A. Ramappa, Orlando, FL (US);
Kurt George Steiner, Orlando, FL (US);
Robert Wayne Bradshaw, Ocoee, FL (US);
Daniele Gilkes, Pompano Beach, FL (US);
Sailesh Mansinh Merchant, Orlando, FL (US);
Deepak A. Ramappa, Orlando, FL (US);
Kurt George Steiner, Orlando, FL (US);
Agere Systems Inc., Allentown, PA (US);
Abstract
A silane passivation process, carried out in-situ together with the formation of a subsequent dielectric film, converts the exposed Cu surfaces of a Cu interconnect structure, to copper silicide. The copper silicide suppresses Cu diffusion and electromigration and serves as a barrier material in regions where contact to further conductive material is made. An entire copper surface of a copper interconnect structure may be silicided or a local portion of the surface silicided after an opening is formed in an overlying dielectric to expose a portion of the copper surface.