The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 22, 2005
Filed:
Dec. 15, 2003
Applicants:
Jin Heong Yim, Daejeon-Shi, KR;
Eun Joo Jang, Gyeonggi-Do, KR;
Tae Kyung Ahn, Seoul, KR;
Inventors:
Assignee:
Samsung Electronics Co., Ltd., Kyungki-Do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L021/20 ;
U.S. Cl.
CPC ...
Abstract
A method for producing a quantum dot silicate thin film for light emitting devices. The quantum dot silicate thin film is produced by introducing a silane compound having a functional group capable of interacting with a quantum dot and at least one reactive group for a sol-gel process into the surface of the quantum dot or a matrix material for dispersing the quantum dot, thereby exhibiting excellent mechanical and thermal stability.
Yim, Jin. (2005). Method for producing quantum dot silicate thin film for light emitting device (U.S. Patent No. 6869864). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6869864
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile