The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 22, 2005
Filed:
Jan. 20, 2004
Joe R. Trogolo, Plano, TX (US);
Lily Springer, Dallas, TX (US);
Jeff Smith, Plano, TX (US);
Sheldon Haynie, Amherst, NH (US);
Joe R. Trogolo, Plano, TX (US);
Lily Springer, Dallas, TX (US);
Jeff Smith, Plano, TX (US);
Sheldon Haynie, Amherst, NH (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
A method of forming two regions having differing depths using a single implantation process is provided. A mask having two openings associated therewith is formed over a semiconductor body, wherein one of the openings has a size larger than an implantation design rule, and the other opening has a size smaller than the design rule. An implant is performed into the semiconductor body through the implant mask, resulting in two distinct doped regions, wherein the region associated with the larger opening has more dopant than the region associated with the smaller opening. Subsequent activation and thermal processing results in the one region diffusing a greater amount than the second region, thereby resulting in two regions formed concurrently having different depths.