The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 22, 2005
Filed:
Dec. 04, 2003
Applicant:
Noh Yeal Kwak, Ichon-Shi, KR;
Inventor:
Noh Yeal Kwak, Ichon-Shi, KR;
Assignee:
Hynix Semiconductor Inc., Ichon-Shi, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L021/336 ;
U.S. Cl.
CPC ...
Abstract
A method of manufacturing a flash memory device, in which a spike annealing is performed after an ion implantation for controlling a threshold voltage. Therefore, it is possible to obtain a uniform and stabilized doping profile for controlling a threshold voltage, to use BFions as a dose for controlling a threshold voltage to obtain a shallow channel junction, to obtain different doping profiles in the channel junction depending on the process conditions and the atmosphere in the spike annealing equipment, and to control a doping profile for controlling a threshold voltage.