The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 22, 2005
Filed:
Jun. 05, 2003
Applicant:
Myoung-soo Kim, Suwon, KR;
Inventor:
Myoung-soo Kim, Suwon, KR;
Assignee:
Samsung Electronics, Co., LTD, Suwon, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L021/336 ;
U.S. Cl.
CPC ...
Abstract
Methods of simultaneously forming MOS transistors and a capacitor on a substrate having gate insulation layers of varying thicknesses. A method includes forming field regions in a substrate to define a first transistor region, a capacitor region, and a second transistor region, forming a first gate stack in the first transistor region and a lower electrode in the capacitor region, and forming an upper electrode on the lower electrode with a dielectric layer interposed therebetween and a second gate stack in the second transistor region.