The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 22, 2005
Filed:
Mar. 16, 2004
Hung-de Chen, Fu-Chien, CN;
Hung-De Chen, Fu-Chien, CN;
Quanta Display Inc., Tao-Yuan Hsien, TW;
Abstract
A method for fabricating a TFT having the steps of providing a substrate; sequentially depositing a transparent conductive layer, a first metal layer, a first insulating layer, a semiconductor layer, and a second metal layer on the substrate; performing a first photo-etching-process (PEP) to remove portions of the deposited layers to form a source electrode and a drain electrode and define a channel region, the first PEP includes a first halftone photolithograph process; depositing a second insulating layer and performing a second PEP to form a plurality of contact holes; and depositing a third metal layer and performing a third PEP to remove portions of the third metal layer.