The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 22, 2005
Filed:
Mar. 14, 2003
Applicants:
Yongjie Cui, Evanston, IL (US);
Lian LI, Milwaukee, WI (US);
Inventors:
Yongjie Cui, Evanston, IL (US);
Lian Li, Milwaukee, WI (US);
Assignee:
WiSys Technology Foundation, Inc., Madison, WI (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L021/00 ;
U.S. Cl.
CPC ...
Abstract
Films of gallium manganese nitride are grown on a substrate by molecular beam epitaxy using solid source gallium and manganese and a nitrogen plasma. Hydrogen added to the plasma provides improved uniformity to the film which may be useful in spin-based electronics.
Cui, Yongjie. (2005). Method and apparatus for the production of a semiconductor compatible ferromagnetic film (U.S. Patent No. 6869806). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6869806
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile