The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 22, 2005

Filed:

Nov. 27, 2002
Applicants:

Katsuo Oshima, Kanagawa, JP;

Koki Muto, Tokyo, JP;

Inventors:

Katsuo Oshima, Kanagawa, JP;

Koki Muto, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G03F009/00 ;
U.S. Cl.
CPC ...
Abstract

The main mask pattern of a photomask is corrected by adding serifs of one type (inner or outer) to a pair of mutually adjacent corners in the pattern, and adding a serif of the opposite type (outer or inner) to the edge between the corners. When the photomask is used to create a resist pattern by photolithography in the fabrication of a semiconductor device, the serifs combine to produce an optical proximity correction that reduces corner rounding and increases edge straightness in the resist pattern.


Find Patent Forward Citations

Oshima, Katsuo. (2005). Mask pattern correction method (U.S. Patent No. 6869738). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6869738

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…