The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 15, 2005
Filed:
Feb. 25, 2002
Jonathan J. Ho, Fremont, CA (US);
Xin X. Wu, Fremont, CA (US);
Zicheng Gary Ling, San Jose, CA (US);
Jan L. DE Jong, Cupertino, CA (US);
Jonathan J. Ho, Fremont, CA (US);
Xin X. Wu, Fremont, CA (US);
Zicheng Gary Ling, San Jose, CA (US);
Jan L. de Jong, Cupertino, CA (US);
Xilinx, Inc., San Jose, CA (US);
Abstract
For IC devices that have repeating structures, a method of generating a database for making a mask layer starts with a hierarchical database describing at least one repeating element in the layer, a skeleton that surrounds the repeating elements, and instructions as to where to locate the repeating elements within the skeleton. This database is modified to generate a database that has optical proximity correction (OPC) for diffraction of light that will pass through the mask and expose photoresist on the IC layer. The optical-proximity corrected mask database is fractured by a mask house using instructions on how the modified data base will be divided to form repeating elements that are still identical after OPC, a mask skeleton that includes non-repeating elements, and instructions for placement of the repeating elements in the skeleton. Thus the resulting mask database is smaller than a mask database that includes all copies of repeating elements.