The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 15, 2005
Filed:
Sep. 30, 2002
Ajit Dubhashi, Redondo Beach, CA (US);
Ajit Dubhashi, Redondo Beach, CA (US);
International Rectifier Corporation, El Segundo, CA (US);
Abstract
A small capacity FET is coupled to a power MOSFET to sense voltage across the power MOSFET for determining current carried through the power MOSFET. The FET is turned on when the power MOSFET is turned on to obtain a sense voltage that is fed to a comparator to determine if the voltage across the power MOSFET exceeds a threshold voltage. The output of the comparator is used to shut off the drive for the power MOSFET if the threshold is exceeded. The voltage across the FET can be used with a temperature sense and knowledge of the FET Rto obtain a sense feedback of current through the power MOSFET. The FET is controlled with a delay to turn on after the power MOSFET is turned on, and turns off before the power MOSFET turns off.