The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 15, 2005
Filed:
Jan. 08, 2003
Rajesh Renegarajan, Poughkeepsie, NY (US);
Giuseppe Larosa, Fishkill, NY (US);
Mark Dellow, Wappingers Falls, NY (US);
Rajesh Renegarajan, Poughkeepsie, NY (US);
Giuseppe LaRosa, Fishkill, NY (US);
Mark Dellow, Wappingers Falls, NY (US);
Infineon Technologies AG, Munich, DE;
International Business Machines Corporation, Armonk, NY (US);
Abstract
A semiconductor device includes a transistor junction formed in a substrate adjacent to an isolation region. A region between the transistor junction and the isolation region includes an area susceptible to hot carrier effects. The transistor junction extends from a surface of the substrate to a first depth. A buried conductive channel layer is formed within the transistor junction between the surface of the substrate and the first depth. The buried conductive channel layer has a peak conduction depth, which is different from a depth of the area susceptible to hot carrier effects.