The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 15, 2005

Filed:

May. 21, 2003
Applicants:

Amol M Kalburge, Irvine, CA (US);

Kevin Q. Yin, Irvine, CA (US);

Inventors:

Amol M Kalburge, Irvine, CA (US);

Kevin Q. Yin, Irvine, CA (US);

Assignee:

Newport Fab, LLC, Newport Beach, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L031/0328 ;
U.S. Cl.
CPC ...
Abstract

According to one exemplary embodiment, a bipolar transistor comprises a base having a top surface. The bipolar transistor further comprises a sacrificial post situated on the top surface of the base. The bipolar transistor also comprises a conformal layer situated on a first and a second side of the sacrificial post, where the conformal layer is not separated from the first and second sides of the sacrificial post by spacers. According to this exemplary embodiment, the bipolar transistor further comprises a sacrificial planarizing layer situated over the conformal layer, the sacrificial post, and the base. The sacrificial planarizing layer has a first thickness in a first region between the first and second sides of the sacrificial post and a second thickness in a second region outside of the first and second sides of the sacrificial post, where the second thickness is greater than the first thickness.


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