The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 15, 2005
Filed:
Dec. 17, 2002
Sung-kwon Lee, Ichon-shi, KR;
Sang-ik Kim, Ichon-shi, KR;
Chang-youn Hwang, Ichon-shi, KR;
Hynix Semiconductor Inc., Kyoungki-do, KR;
Abstract
The present invention provides a method for fabricating a semiconductor device with use of an ArF light source capable of minimizing deformations of a photoresist pattern for ArF during an etching process. Also, when forming the pattern, CFgas is used at a main etching step to compensate etch tolerance of the photoresist for ArF. By controlling process recipe properly, it is possible to minimize pattern deformations as simultaneously as to form a micronized pattern. To compensate the etch tolerance of the photoresist for ArF weaker than that of a photoresist for KrF, the main etching step is divided into three sub-steps, thereby providing a method for minimizing the pattern deformations when duplicating the pattern.