The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 15, 2005
Filed:
Sep. 10, 2003
Jana Hansel, Dresden, DE;
Matthias Rudolph, Dresden, DE;
Jana Hansel, Dresden, DE;
Matthias Rudolph, Dresden, DE;
Infineon Technologies AG, München, DE;
Abstract
The present invention provides a fabrication method for a semiconductor structure having a partly filled trench, having the following steps: provision of a semiconductor structure () having a trench (); filling of the trench () with a filling () in such a way that the filling () projects above a surface (OF) of the semiconductor structure () by a first height (h1), the filling () covering the trench () and the periphery () of the trench (); planarization of the filling () in a first etching step in such a way that the filling () is essentially planar with the surface (OF) of the semiconductor structure (); and sinking of the filling () in the trench () in a second etching step by a predetermined depth (T) proceeding from the surface of the semiconductor structure (); essentially the same plasma power and the same etchant composition being used for the first and second etching steps.