The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 15, 2005
Filed:
Dec. 20, 2002
Cheol Soo Park, Kyoungki-do, KR;
Cheol Soo Park, Kyoungki-do, KR;
Dongbu Electronics Co., Ltd., Seoul, KR;
Abstract
A method for fabricating a semiconductor device comprising: providing a semiconductor substrate on which a transistor made of a gate electrode, a source/drain is formed; forming a first insulating layer on the semiconductor substrate, with bit-line contact holes and a storage node contact hole being formed in the insulating layer to expose the source and drain; forming bit-line contact plugs and storage node in the bit-line contact holes and the storage node contact hole; removing the first insulating layer; forming a second insulating layer on the resultant structure; forming a first conductive layer on the second insulating layer; forming a third insulating layer; forming bit-line contact holes by selective removal of the first conductive layer and the third insulating layer opposing the upper surface of the bit-line contact plug; and forming a second conductive layer in the bit-line contact holes.