The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 15, 2005

Filed:

Apr. 28, 2004
Applicants:

Sam Liao, Taichung, TW;

Shian-jyh Lin, Yonghe, TW;

Chia-sheng Yu, Banciao, TW;

Inventors:

Sam Liao, Taichung, TW;

Shian-Jyh Lin, Yonghe, TW;

Chia-Sheng Yu, Banciao, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L021/8242 ;
U.S. Cl.
CPC ...
Abstract

A method for forming a deep trench capacitor mainly utilizes a liquid phase deposition (LPD) oxide to form a collar oxide layer in the trench, followed by forming a conductive layer serving as an upper electrode of the deep trench capacitor, thereby avoiding collar oxide residue in the conductive layer and thus forming good electrical connection. And, the method of the present invention does not need a dry etch to remove the unnecessary collar oxide layer such that the process can be simplified.


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Liao, Sam. (2005). Method for forming deep trench capacitor with liquid phase deposition oxide as collar oxide (U.S. Patent No. 6867091). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6867091

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