The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 15, 2005
Filed:
Mar. 13, 2003
David Chen, East Palo Alto, CA (US);
Robert A. Shepherd, Jr., Castro Valley, CA (US);
Vishal Gauri, San Jose, CA (US);
George D. Papasouliotis, Cupertino, CA (US);
David Chen, East Palo Alto, CA (US);
Robert A. Shepherd, Jr., Castro Valley, CA (US);
Vishal Gauri, San Jose, CA (US);
George D. Papasouliotis, Cupertino, CA (US);
Novellus Systems, Inc., San Jose, CA (US);
Abstract
High density plasma chemical vapor deposition and etch back processes that can fill high aspect ratio (typically at least 5:1, for example 6:1), narrow width (typically sub 0.13 micron, for example 0.1 micron or less) gaps with significantly reduced incidence of voids or weak spots are provided. This deposition part of the process may involve the use of any suitable high density plasma chemical vapor deposition (HDP CVD) chemistry. The etch back part of the process involves an integrated multi-step (for example, two-step) procedure including an anisotropic dry etch followed by an isotropic dry etch. The all dry deposition and etch back process in a single tool increases throughput and reduces handling of wafers resulting in more efficient and higher quality gap fill operations.