The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 15, 2005

Filed:

Nov. 13, 2001
Applicants:

Dipankar Chandra, Richardson, TX (US);

Athanasios J. Syllaios, Richardson, TX (US);

Inventors:

Dipankar Chandra, Richardson, TX (US);

Athanasios J. Syllaios, Richardson, TX (US);

Assignee:

Raytheon Company, Waltham, MA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01N021/00 ; G01N031/22 ; G01N015/06 ; G01N033/00 ; G01N033/48 ;
U.S. Cl.
CPC ...
Abstract

A sensor for detecting a target matter includes a chemical sensitive layer that is operable to react when exposed to the target matter and a piezoresistive material coupled to the chemical sensitive layer. The chemical sensitive layer is configured such that the reaction of the target matter with the chemical sensitive layer creates an interfacial tension at the interface of the chemical sensitive layer and the piezoresistive material that changes the electrical resistance of the piezoresistive material. However, the chemical sensitive layer is configured such that the reaction of the target matter with the chemical sensitive layer does not affect the bulk properties of the chemical sensitive layer enough to change the electrical resistance of the piezoresistive material. The sensor also includes an electrical circuit coupled to the piezoresistive material that is operable to detect the change in the electrical resistance of the piezoresistive material due to the interfacial tension.


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