The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 08, 2005
Filed:
Jul. 02, 2002
Satofumi Kinei, Soraku-gun, JP;
Takahiro Hashimoto, Yamatokoriyama, JP;
Satofumi Kinei, Soraku-gun, JP;
Takahiro Hashimoto, Yamatokoriyama, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
There is provided a semiconductor laser device which is generally uniform in carrier concentration of a clad layer, almost free from strain, and less demanding for time and labor in its manufacturing, and which has stable characteristics. On an n-GaAs substrate, an n-type clad layer, an active layer, a p-type clad layer, and a cap layer are stacked one on another at a temperature of 700-750° C. Widthwise both side portions of the cap layer as well as widthwise both side specified-depth portions of the p-type clad layer are removed by etching to form a ridge portion, and a current constriction layer is formed on widthwise both sides of the ridge portion. A flattening layer having a planar surface is formed on the current constriction layer and the cap layer by slow cooling LPE process at a temperature of 700° C. or lower. On the flattening layer, a contact layer is formed by MOCVD process at a temperature of about 650° C.