The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 08, 2005
Filed:
May. 10, 2001
Masataka Kondo, Osaka, JP;
Kiyoto Ohta, Osaka, JP;
Tomonori Fujimoto, Osaka, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
A semiconductor integrated circuit is provided in which a negative voltage generation circuit capable of supplying a memory cell transistor substrate with a stable negative voltage, independently of the fluctuation of a power source voltage or environmental conditions and the process conditions etc., is realized easily, and in which the data holding time of a memory can be secured sufficiently, and the power consumption is reduced. A voltage detection part-B included in the negative voltage generation circuit is provided with a constant voltage generation circuit-B, a measuring voltage generation circuit-B, which receives a constant voltage STDVOUT sent from the constant voltage generation circuit via a voltage supplying circuit-Band a negative voltage VBB sent from a negative voltage generation part and converts it into a measuring voltage REFVby resistors R', R′, a first comparator AMPwhich compares the measuring voltage sent from the measuring voltage generation circuit with ground voltage and outputs the result of comparison, and an output buffer circuit-B′, which amplifies the compared output from the first comparator and outputs it to the negative voltage generation part.