The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 08, 2005

Filed:

Jul. 07, 2003
Applicants:

Mehmet Arik, Niskayuna, NY (US);

Stanton E. Weaver, Jr., Northville, NY (US);

James C. Carnahan, Niskayuna, NY (US);

Charles A. Becker, Schenectady, NY (US);

William D. Gerstler, Niskayuna, NY (US);

Inventors:

Mehmet Arik, Niskayuna, NY (US);

Stanton E. Weaver, Jr., Northville, NY (US);

James C. Carnahan, Niskayuna, NY (US);

Charles A. Becker, Schenectady, NY (US);

William D. Gerstler, Niskayuna, NY (US);

Assignee:

GELcore LLC, Valley View, OH (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L023/34 ;
U.S. Cl.
CPC ...
Abstract

A semiconductor device die () is disposed on a heat-sinking support structure (). Nanotube regions () contain nanotubes () are arranged on a surface of or in the heatsinking support structure (). The nanotube regions () are arranged to contribute to heat transfer from the semiconductor device die () to the heat-sinking support structure (). In one embodiment, the semiconductor device die () includes die electrodes (), and the support structure () includes contact pads () defined by at least some of the nanotube regions (). The contact pads () electrically and mechanically contact the die electrodes (). In another embodiment, the heat-sinking support structure () includes microchannels () arranged laterally in the support structure (). At least some of the nanotube regions are disposed inside the microchannels ().


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