The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 08, 2005
Filed:
Mar. 06, 2003
Ping-wei Lin, hsinvhu, TW;
Gwo-chyuan Kuoh, Keelung, TW;
Chao-sheng Chiang, Hsinchu, TW;
Silicon Integrated Systems Corp., Hsinchu, TW;
Abstract
The present invention disclosed a manufacturing method of shallow trench isolation (STI). By making use of depositing two layer of SiON with specific thickness and different extinction coefficient (k) as the ARC, comprising: (a) Depositing pad oxide/silicon nitride on a substrate as a hard mask for etching; (b) Depositing a layer of high extinction coefficient SiON on said silicon nitride, then depositing a layer of low extinction coefficient SiON as the ARC; (c) Exposing by using a STI mask and developing to form an etching mask of said STI; (d) Etching said SiON, silicon nitride, pad oxide and said substrate to form a shallow trench; (e) Growing an oxide layer on the side-wall and the bottom of said shallow trench to remove damage and decrease leakage; (f) Depositing an oxide layer on said shallow trench and said silicon nitride to fill said shallow trench; (g) planarizing by CMP.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile