The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 08, 2005
Filed:
Aug. 28, 2003
Carlos A. Paz DE Araujo, Colorado Springs, CO (US);
Masamichi Azuma, Shiga, JP;
Larry D. Mcmillan, Colorado Springs, CO (US);
Koji Arita, Osaka, JP;
Carlos A. Paz de Araujo, Colorado Springs, CO (US);
Masamichi Azuma, Shiga, JP;
Larry D. McMillan, Colorado Springs, CO (US);
Koji Arita, Osaka, JP;
Symetrix Corporation, Colorado Springs, CO (US);
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
Integrated circuit capacitors in which the capacitor dielectric is a thin film of BST having a grain size smaller than 200 nanometers formed above a silicon germanium substrate. Typical grain sizes are 40 nm and less. The BST is formed by deposition of a liquid precursor by a spin-on process. The original liquid precursor includes an alkoxycarboxylate dissolved in 2-methoxyethanol and a xylene exchange is performed just prior to spinning. The precursor is dried in air at a temperature of about 400° C. and then furnace annealed in oxygen at a temperature of between 600° C. and 850° C.