The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 01, 2005
Filed:
Jun. 12, 2003
Yasuaki Yoshida, Tokyo, JP;
Yasuaki Yoshida, Tokyo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A semiconductor laser device includes a lower cladding layer of n-(Al0.66Ga0.34)0.5In0.5P, an active layer having a window structure which has a disordered MQW structure, a first upper cladding layer of p-(Al0.7Ga0.3)0.5In0.5P, and a second upper cladding layer of (Al0.66Ga0.34)0.5In0.5P sequentially disposed on an n-GaAs substrate. The refractive index of the first upper cladding layer is smaller than that of the lower cladding layer, and refractive index of the second upper cladding layer is larger than that of the first upper cladding layer and identical to that of the lower cladding layer. The position of peak light intensity at the window structure of the active layer coincides with or very closely approaches the position of the active layer.