The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 01, 2005
Filed:
May. 11, 2001
Kazutomi Mori, Tokyo, JP;
Shintaro Shinjo, Tokyo, JP;
Kousei Maemura, Tokyo, JP;
Teruyuki Shimura, Tokyo, JP;
Kazuhiko Nakahara, Tokyo, JP;
Tadashi Takagi, Tokyo, JP;
Kazutomi Mori, Tokyo, JP;
Shintaro Shinjo, Tokyo, JP;
Kousei Maemura, Tokyo, JP;
Teruyuki Shimura, Tokyo, JP;
Kazuhiko Nakahara, Tokyo, JP;
Tadashi Takagi, Tokyo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A high-frequency semiconductor device according to the present invention achieves improvements in degradation of noise characteristics and a reduction in gain, and an improvement in reduction in power efficiency while suppressing a concentration of a current to multifinger HBTs. In the multifinger HBTs constituting a first stage and an output stage of an amplifier, basic HBTsthat constitute the multifinger HBTcorresponding to the first stage, are each made up of an HBTand an emitter resistorconnected to the corresponding emitter of the HBT, whereas basic HBTsthat constitute the multifinger HBTcorresponding to the output stage, are each comprised of an HBTand a base resistorconnected to the corresponding base of the HBT. The high-frequency semiconductor device according to the present invention is useful as a high output power amplifier used in satellite communications, ground microwave communications, mobile communications, etc.