The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 01, 2005

Filed:

Dec. 03, 2002
Applicants:

Douglas K. Maly, Jefferson, MA (US);

Orrin B. West, Canton, MI (US);

Chingchi Chen, Ann Arbor, MI (US);

Inventors:

Douglas K. Maly, Jefferson, MA (US);

Orrin B. West, Canton, MI (US);

Chingchi Chen, Ann Arbor, MI (US);

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01R007/00 ;
U.S. Cl.
CPC ...
Abstract

A non-invasive, non-destructive method and system for determining power transistor peak die voltage utilizes values for each of a plurality of parameters determined by measurement of external terminal voltages for any number of switches, such as transistors of an inverter. Stray inductance values are calculated and used with measured current gradient to calculate the peak die voltages for the switches. A refinement of the method determines transistor peak die voltage without measuring current.


Find Patent Forward Citations

Maly, Douglas. (2005). Method and system for non-invasive power transistor die voltage measurement (U.S. Patent No. 6861835). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6861835

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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