The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 01, 2005
Filed:
Jun. 02, 2003
Applicant:
Raul A. Perez, Richardson, TX (US);
Inventor:
Raul A. Perez, Richardson, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Primary Examiner:
Int. Cl.
CPC ...
G05F003/16 ;
U.S. Cl.
CPC ...
Abstract
The Vt of an MOS transistor is lowered in response to its load current. In a LDO (low dropout) regulator, lowering the Vt of the pass transistor with load increases the level of drive that can be applied to the pass transistor thus allowing a smaller transistor to be used for the same load.