The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 01, 2005
Filed:
Oct. 29, 2003
Tsutomu Hosoda, Kawasaki, JP;
Akira Yamanoue, Kawasaki, JP;
Tsutomu Hosoda, Kawasaki, JP;
Akira Yamanoue, Kawasaki, JP;
Fujitsu Limited, Kawasaki, JP;
Abstract
The semiconductor device comprises an insulating filmformed mainly of a film of polyallyl ether resin; an interconnection structureburied in the insulating film, and having a via portion buried in a groove-shaped via hole and an interconnection portion formed on the via portion and having an eave-shaped portion horizontally extended beyond the via portion; an insulating filmformed on the insulating filmwith the interconnection structureburied in and formed mainly of a film of organosilicate glass; and an interconnection structureburied in the insulating filmand connected to the interconnection structure. Thus, the stresses to be exerted to the insulating films are decreased, the generation of cracks and peelings generated in the interfaces between the insulating films and in the insulating films due to the stresses generated at the ends of the interconnection structures can be effective prevented.