The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 01, 2005

Filed:

Oct. 31, 2003
Applicant:

Paul A. Hyde, Essex Junction, VT (US);

Inventor:

Paul A. Hyde, Essex Junction, VT (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L029/76 ; H01L029/94 ; H01L031/062 ; H01L031/113 ; H01L031/119 ;
U.S. Cl.
CPC ...
Abstract

A ladder-type gate structure for a silicon-on-insulator (SOI) four-terminal semiconductor device is disclosed. The structure includes a gate having a first and second portion, a body region, which is under the first portion of the gate, a body contact, which is adjacent to the second portion of the gate, and a plurality of body contacts connecting the body region to the body contact through a drain region. The gate structure provides an independently controlled body region and includes a substantially uniform voltage across the body region in the SOI semiconductor device.


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