The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 01, 2005
Filed:
Apr. 05, 2004
Nobuyuki Otsuka, Kawanishi, JP;
Koichi Mizuno, Nara, JP;
Shigeo Yoshii, Hirakata, JP;
Asamira Suzuki, Osaka, JP;
Nobuyuki Otsuka, Kawanishi, JP;
Koichi Mizuno, Nara, JP;
Shigeo Yoshii, Hirakata, JP;
Asamira Suzuki, Osaka, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
A hetero field effect transistor according to the present invention comprises an InP substrate, a channel layer provided on the InP substrate with a buffer layer disposed between the InP substrate and the channel layer, a spacer layer constituted by a semiconductor having a band gap larger than that of the channel layer formed to hetero-join to the channel layer, and a carrier supply layer formed to be adjacent to the spacer layer, wherein the channel layer comprises a predetermined semiconductor layer constituted by a compound semiconductor represented by a formula GaInNAin which A is As or Sb, composition x satisfies 0≦x≦0.2, and composition y satisfies 0.03≦y≦0.10.