The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 01, 2005
Filed:
Aug. 02, 2002
Applicants:
John S. Harchanko, New Market, AL (US);
Michael Whitley, Madison, AL (US);
Inventors:
John S. Harchanko, New Market, AL (US);
Michael Whitley, Madison, AL (US);
Assignee:
Mems Optical, Inc., Huntsville, AL (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L021/302 ;
U.S. Cl.
CPC ...
Abstract
Multi-levels are etched into silicon. The levels are etched through a combination of crosslinking photoresist, multiple photoresist patterning and development, wet etching and/or dry-etching. RIE, DRIE, and other etch techniques can be used during different steps. The multilevel structure may thereby be produced at commercially acceptable production rates allowing the method of the present application to be used in volume production of multilevel structures.