The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 01, 2005
Filed:
Apr. 02, 2003
Kazuhiko Horikoshi, Yokohama, JP;
Klyoshi Ogata, Kawasaki, JP;
Takuo Tamura, Yokohama, JP;
Miwako Nakahara, Yokohama, JP;
Makoto Ohkura, Futyu, JP;
Ryoji Oritsuki, Shirako, JP;
Yasushi Nakano, Mobara, JP;
Takeo Shiba, Kodaira, JP;
Kazuhiko Horikoshi, Yokohama, JP;
Klyoshi Ogata, Kawasaki, JP;
Takuo Tamura, Yokohama, JP;
Miwako Nakahara, Yokohama, JP;
Makoto Ohkura, Futyu, JP;
Ryoji Oritsuki, Shirako, JP;
Yasushi Nakano, Mobara, JP;
Takeo Shiba, Kodaira, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
Inexpensive, unannealed glass is used as a substrate. The surface of a polycrystalline silicon film doped with boron (B) or phosphorus (P) is oxidized with ozone at a processing temperature of 500° C. or below to form a silicon oxide film of 4 to 20 nm thick on the surface of polycrystalline silicon. On account of this treatment, the level density at the interface between the gate-insulating layer and the channel layer can be made lower, and a thin-film transistor having less variations of characteristics can be formed on the unannealed glass substrate.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile