The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 01, 2005
Filed:
Oct. 02, 2003
Michael G. Monroe, Corvallis, OR (US);
Eric L. Nikkel, Philomath, OR (US);
Dennis M. Lazaroff, Corvallis, OR (US);
Michael G. Monroe, Corvallis, OR (US);
Eric L. Nikkel, Philomath, OR (US);
Dennis M. Lazaroff, Corvallis, OR (US);
Hewlett-Packard Development Company, L.P., Houston, TX (US);
Abstract
A method of forming a MEMS device includes depositing a conductive material on a substructure, forming a first sacrificial layer over the conductive material, including forming a substantially planar surface of the first sacrificial layer, and forming a first element over the substantially planar surface of the first sacrificial layer, including communicating the first element with the conductive material through the first sacrificial layer. In addition, the method includes forming a second sacrificial layer over the first element, including forming a substantially planar surface of the second sacrificial layer, forming a support through the second sacrificial layer to the first element after forming the second sacrificial layer, including filling the support, and forming a second element over the support and the substantially planar surface of the second sacrificial layer. As such, the method further includes substantially removing the first sacrificial layer and the second sacrificial layer, thereby supporting the second element relative to the first element with the support.